TPS53632G

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用于 48V GaN 直流/直流轉換器的半橋 D-CAP+ 控制器

產品詳情

Rating Catalog Topology Multiphase Vin (max) (V) 3.6 Control mode Current Features Light-load efficiency Operating temperature range (°C) -10 to 105 Duty cycle (max) (%) 50
Rating Catalog Topology Multiphase Vin (max) (V) 3.6 Control mode Current Features Light-load efficiency Operating temperature range (°C) -10 to 105 Duty cycle (max) (%) 50
VQFN (RSM) 32 16 mm2 4 x 4
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

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技術文檔

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類型 標題 下載最新的英語版本 日期
* 數據表 TPS53632G D-CAP+? Half-Bridge PWM Controller Optimized for GaN-based 48-V DC/DC Converter with I2C Interface 數據表 (Rev. A) PDF | HTML 2016年 6月 10日
EVM 用戶指南 Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B) 2017年 8月 2日
技術文章 Enabling 48V-to-POL single-stage conversion with GaN PDF | HTML 2016年 7月 5日
技術文章 Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more! PDF | HTML 2016年 3月 28日

設計和開發

如需其他信息或資源,請點擊以下任一標題進入詳情頁面查看(如有)。

評估板

LMG5200POLEVM-10 — LMG5200 GaN 48V 至 1V 負載點評估模塊

LMG5200POLEVM-10 EVM 旨在用于評估 48V 至 1V 應用中的 LMG5200 GaN 功率級和 TPS53632G 半橋負載點控制器。? 該 EVM 通過倍流整流器將 48V-1V 轉換器作為單級硬開關半橋使用。? 該 EVM 支持 36V 至 75V 的輸入電壓和高達 50A 的輸出電流。該拓撲有效支持高降壓比,同時提供高輸出電流和可控性。

用戶指南: PDF
TI.com 上無現貨
物料清單 (BOM)

PMP4497 BOM

TIDRNB1.PDF (67 KB)
原理圖

PMP4497 Schematic

TIDRNB0.PDF (519 KB)
參考設計

PMP22089 — 配備 GaN 技術的半橋點負載轉換器參考設計

此參考設計將板載變壓器的匝數比從 5:1 修改為 3:1,以降低輸入范圍。該電路板支持 24V 至 32V 的輸入電壓、0.5V 至 1.0V 的輸出電壓和高達 40A 的輸出電流。該拓撲有效支持高降壓比,同時提供高輸出電流和可控性。原 EVM 設計用于評估 LMG5200 GaN 半橋功率級和 TPS53632G 半橋負載點 (PoL) 控制器。該電路板通過倍流整流器將轉換器作為單級硬開關半橋使用。? 該電路板是 LMG5200POLEVM-10 評估模塊的重新設計版本。
測試報告: PDF
原理圖: PDF
參考設計

PMP4497 — LMG5200 48V 至 1V/40A 單級轉換器參考設計

PMP4497 是一種基于 GaN 的參考設計解決方案,適用于 FPGA、ASIC 等 Vcore 應用。憑借高度集成和低開關損耗,GaN 模塊 LMG5200 可實現從 48V 到 1.0V 的高效率單級解決方案,并以此解決方案取代傳統的兩級解決方案。此設計展示出了比兩級解決方案更強的 GaN 性能和系統優勢。? 低成本 ER18 平面 PCB 變壓器嵌于板上。該設計具有緊湊的外形尺寸 (45mm*26mm*11mm)。還可通過優化頻率和元件進一步減小尺寸。
測試報告: PDF
原理圖: PDF
封裝 引腳 CAD 符號、封裝和 3D 模型
VQFN (RSM) 32 Ultra Librarian

訂購和質量

包含信息:
  • RoHS
  • REACH
  • 器件標識
  • 引腳鍍層/焊球材料
  • MSL 等級/回流焊峰值溫度
  • MTBF/時基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續可靠性監測
包含信息:
  • 制造廠地點
  • 封裝廠地點

推薦產品可能包含與 TI 此產品相關的參數、評估模塊或參考設計。

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