SLPS689 May 2017 CSD22206W
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- YZF|9
Thermal pad, mechanical data (Package|Pins)
Orderable Information
1 Features
- Ultra-Low Resistance
- Small Footprint 1.5 mm × 1.5 mm
- Lead Free
- Gate ESD Protection
- RoHS Compliant
- Halogen Free
- Gate-Source Voltage Clamp
2 Applications
- Load Switch Applications
- Battery Management
- Battery Protection
3 Description
This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View and Circuit Configuration
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V | |
| Qg | Gate Charge Total (–4.5 V) | 11.2 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 1.8 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = –2.5 V | 6.8 | mΩ |
| VGS = –4.5 V | 4.7 | |||
| VGS(th) | Threshold Voltage | –0.7 | V | |
Device Information
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD22206W | 3000 | 7-Inch Reel | 1.50-mm × 1.50-mm Wafer BGA Package |
Tape and Reel |
| CSD22206WT | 250 |
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID | Continuous Drain Current(1) | –5 | A |
| Pulsed Drain Current(2) | –108 | A | |
| PD | Power Dissipation | 1.7 | W |
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
- Device operating at a temperature of 105°C.
- Typ RθJA = 75°C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate Charge |