SLPS427D October 2012 – September 2015 CSD17313Q2Q1
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- DQK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information
1 Features
- Qualified for Automotive Applications
- Optimized for 5-V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Pb-Free
- RoHS Compliant
- Halogen-Free
- SON 2-mm × 2-mm Plastic Package
2 Applications
- DC-DC Converters
- Battery and Load Management Applications
3 Description
This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
Top View
Added text for spacing
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
| VDS | Drain-to-Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5 V) | 2.1 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 0.4 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 31 | mΩ |
| VGS = 4.5 V | 26 | mΩ | ||
| VGS = 8 V | 24 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.3 | V | |
Ordering Information(1)
| PART NUMBER | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD17313Q2Q1 | 3000 | 13-Inch Reel | SON 2-mm × 2-mm Plastic Package | Tape and Reel |
| CSD17313Q2Q1T | 250 | 7-Inch Reel |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V |
| VGS | Gate-to-Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current (package limited) | 5 | A |
| Continuous Drain Current (silicon limited), TC = 25°C | 19 | ||
| Continuous Drain Current(1) | 7.3 | ||
| IDM | Pulsed Drain Current, TA = 25°C(2) | 57 | A |
| PD | Power Dissipation(1) | 2.4 | W |
| Power Dissipation, TC = 25°C | 17 | ||
| TJ, TSTG | Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse, ID = 19A, L = 0.1mH, RG = 25Ω |
18 | mJ |
On State Resistance vs Gate to Source Voltage |
Gate Charge |