SLVK153 November 2023 TPS7H1111-SP
1.2 Device Details
Table 1-1 lists the device information and test conditions used in the TID characterization.
Table 1-1 Device and Exposure Details
| TID HDR and LDR Details | |
|---|---|
| TI Device | TPS7H1111-SP (QMLP) |
| TI Part Name | 5962R2120302PYE |
| Device Function | Low Dropout Linear Regulator |
| Package | 28-pin HTSSOP (PWP) |
| Technology | LBC7 (Linear BiCMOS 7) |
| Assembly Lot Number | 3371592ML3 |
| Quantity Tested |
|
| HDR Dose rate | 194.5 rad(Si) / s ioinizing radiation with increments(1) |
| HDR Radiation Facility | Texas Instruments, Dallas, Texas |
| Irradiation and Test Temperature | Ambient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750. |
Figure 1-1 TPS7H1111-QMLP Device (Front)
Figure 1-2 TPS7H1111-QMLP Device
(Back)1. 100krad biased and unbiased
devices were annealed for 1 week at room temperature with their
respective bias conditions resulting in an effective dose rate
of 165mrad(Si)/s.