SBAK034 January 2025 ADC168M102R-SEP
The following is the device qualification summary.
Qualification by Similarity (Qualification Family)
A new device can be qualified either by performing full-scale quality and reliability tests on the actual device or using previously qualified devices through qualification by similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive tests are eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.
The QBS rules for a technology, product, test parameters or package shall define which attributes are required to remain fixed for the QBS rules to apply. The attributes which are expected and allowed to vary are reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.
|
TI Device: |
ADC168M102RRHBTSEP |
Assembly site: |
TI-CL (Philippines) | |
|
DLA VID: |
V62/24631 |
Test Site: |
TI-M (Malaysia) | |
|
Wafer fab: |
DMOS5 |
Pin and package type |
32 | RHB | |
|
Fab process: |
HPA07 |
Leadframe: |
Cu |
|
|
Fab technology: |
50HPA07 |
Termination finish: |
NiPdAu |
|
|
Die revision: |
E |
Mount Compound: |
Sumitomo CRM 1076NS | |
|
Die name: |
CADS8363SEANP |
Bond wire: |
25.4μm Au 2N | |
|
ESD CDM: |
±250V |
Mold Compound: |
Sumitomo EME-G700LTD | |
|
ESD HBM: |
±1000V |
Moisture sensitivity: |
MSL 3 | 260°C |
| DESCRIPTION | CONDITION | SAMPLE SIZE USED | REJECTS | LOTS REQUIRED | TEST METHOD |
|---|---|---|---|---|
| Electromigration | Maximum recommended operating conditions | N/A | N/A | Per TI Design Rules |
| Wire bond life | Maximum recommended operating conditions TI data sheet | N/A | N/A | Per TI Design Rules |
| Electrical characterization |
TI data sheet |
30 |
1 |
N/A |
| Electrostatic discharge sensitivity | HBM |
3 units / voltage |
1 | JESD22-A114 |
| CDM | JESD22-C101 | |||
| Latch-up | Per technology | 3 | 0 |
1 |
JESD78 |
| Physical dimensions | TI data sheet |
5 | 0 |
1 |
JESD22- B100 |
| Thermal impedance | θJA onboard |
Per Pin-Package |
Outgassing characterization |
JESD51 |
| Bias life test | 125°C | 1000 hours or equivalent | 77 | 0 |
1 |
JESD22-A108 (1) |
| Biased HAST | 130°C | 85% | 96 hours | 77 | 0 |
1 |
JESD22-A110 (1) |
| Extended biased HAST | 130°C | 85% | 250 hours (for reference) | 77 | 0 |
1 |
JESD22-A110 (1) |
| Unbiased HAST | 130°C | 85% | 192 hours | 77 | 0 |
1 |
JESD22-A118 (1) |
| Temperature Cycle | -65°C to +150°C non-biased for 500 cycles |
77 | 0 |
1 |
JESD22-A104 (1) |
| Solder heat | 260°C for 10 seconds |
22 | 0 |
1 |
JESD22-B106 |
| Resistance to Solvents | Ink symbol only |
12 | 0 |
1 |
JESD22-B107 |
| Solderability | Condition A (steam age for 8 hours) |
22 | 0 |
1 |
ANSI J-STD-002-92 |
| Flammability | Method A | Method B |
5 | 0 |
1 |
UL-1964 |
| Bond shear | Per wire size |
5 units x 30 | 0 bonds |
1 |
JESD22-B116 |
| Bond pull strength | Per wire size | 5 units x 30 | 0 bonds |
1 |
ASTM F-459 |
| Die shear | Per wire size | 5 | 0 |
1 |
TM 2019 |
| High temp storage | 150 °C | 1,000 hours | 77 | 0 |
3 |
JESD22-A103-A (1) |
| Moisture sensitivity | Surface mount only |
12 |
1 |
J-STD-020-A (1) |
| Radiation response characterization | Total ionization dose, single-event latch-up |
5 Units for HDR |
1 |
MIL-STD-883/Method 1019 |
| Outgassing characterization | TML (total mass lost), CVCM (collected volatile condensable material) |
5 |
1 |
ASTM E595 |