SNOSB66B August 2011 – November 2014 EMB1412
PRODUCTION DATA.
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| EMB1412 | HVSSOP (8) | 3.00 mm x 3.00 mm |