ZHCSC62D March 2014 – December 2017 UCC28630 , UCC28631 , UCC28632 , UCC28633 , UCC28634
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3
Feature Description
- 8.3.1 High-Voltage Current Source Start-Up Operation
- 8.3.2 AC Input UVLO / Brownout Protection
- 8.3.3 Active X-Capacitor Discharge (UCC28630 and UCC28633 only)
- 8.3.4 Magnetic Input and Output Voltage Sensing
- 8.3.5 Fixed-Point Magnetic Sense Sampling Error Sources
- 8.3.6 Magnetic Sense Resistor Network Calculations
- 8.3.7 Magnetic Sensing: Power Stage Design Constraints
- 8.3.8 Magnetic Sense Voltage Control Loop
- 8.3.9 Peak Current Mode Control
- 8.3.10 IPEAK Adjust vs. Line
- 8.3.11 Primary-Side Constant-Current Limit (CC Mode)
- 8.3.12 Primary-Side Overload Timer (UCC28630 only)
- 8.3.13 Overload Timer Adjustment (UCC28630 only)
- 8.3.14 CC-Mode IOUT(lim) Adjustment
- 8.3.15 Fault Protections
- 8.3.16 Pin-Fault Detection and Protection
- 8.3.17 Over-Temperature Protection
- 8.3.18 External Fault Input
- 8.3.19 External SD Pin Wake Input (except UCC28633)
- 8.3.20 External Wake Input at VSENSE Pin (UCC28633 Only)
- 8.3.21 Mode Control and Switching Frequency Modulation
- 8.3.22 Frequency Dither For EMI (except UCC28632)
- 8.4 Device Functional Modes
-
9 Applications and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Notebook Adapter, 19.5 V, 65 W
- 9.2.2 UCC28630 Application Schematic
- 9.2.3 Design Requirements
- 9.2.4
Detailed Design Procedure
- 9.2.4.1 Custom Design With WEBENCH? Tools
- 9.2.4.2 Input Bulk Capacitance and Minimum Bulk Voltage
- 9.2.4.3 Transformer Turn Ratio
- 9.2.4.4 Transformer Magnetizing Inductance
- 9.2.4.5 Current Sense Resistor RCS
- 9.2.4.6 Transformer Constraint Verification
- 9.2.4.7 Transformer Selection and Design
- 9.2.4.8 Slope Compensation Verification
- 9.2.4.9 Power MOSFET and Output Rectifier Selection
- 9.2.4.10 Output Capacitor Selection
- 9.2.4.11 Calculation of CC Mode Limit Point
- 9.2.4.12 VDD Capacitor Selection
- 9.2.4.13 Magnetic Sense Resistor Network Selection
- 9.2.4.14 Output LED Pre-Load Resistor Calculation
- 9.2.5 External Wake Pulse Calculation at VSENSE Pin (UCC28633 Only)
- 9.2.6 Energy Star Average Efficiency and Standby Power
- 9.2.7 Application Performance Plots
- 9.3 Dos and Don'ts
- 10Power Supply Recommendations
- 11Layout
- 12器件和文檔支持
- 13機械、封裝和可訂購信息
9.2.4.13 Magnetic Sense Resistor Network Selection
The required values for the magnetic sense divider network are calculated from Equation 11 and Equation 12. For the RM10/I transformer used in the PWR572 EVM, the secondary-side to bias leakage inductance was measured and found to be approximately 4%. This figure can be reasonably estimated as the ratio of the inductance value measured across the secondary-side pins with the bias pins shorted together (primary winding should remain open-circuit), to the inductance value measured across the secondary-side pins with all other windings open:
RA is calculated as shown in Equation 62.
The nearest standard E96 value 22.6 kΩ is selected. RB may then be calculated to set VOUT at 19.5 V.
The nearest E96 value is 32.4 kΩ, which could be used, but results in some set-point regulation error. As shown in Figure 44, the setpoint may be fine-tuned by using two parallel resistors for RB. In this case use values of 39 kΩ and 180 kΩ, to give a net equivalent of 32.05 kΩ, very close to the target value in Equation 63.
Note that the pull-up diode to DRV pin should be a standard switching signal diode such as BAS21 or similar. The reverse recovery of the diode should be 100 ns or less. A slow-recovery diode clamps the VSENSE pin low for an initial portion of the flyback interval, and may impair or prevent the ability to take a valid output voltage sample.