The input-side power supply VCC can support a wide voltage range from 3V to 5.5V to support both 3.3V and 5V controller signaling. VCC is monitored by an undervoltage comparator to ensure valid operation. See Section 6.3.2 for more information about the VCC undervoltage lockout protection.

The output-side power supply, VDD to VEE, can support a wide range up to 30V. The device can support either unipolar or bipolar supplies. The negative power supply, VEE, with respect to source or emitter, COM, is usually adopted to avoid false turn on when the other switch in the phase leg is turned on. Negative voltage is important for SiC MOSFETs due to their fast switching speeds, as well as for IGBTs when not using an active Miller clamp. VDD is monitored by an undervoltage comparator to enure valid operation. See Section 6.3.2 for more information about the VDD undervoltage lockout protection.

The OUTP and OUTN predriver outputs are driven to internally generated supply rails optimized for driving silicon buffer MOSFETs. VBP is 11V below VDD for controlling the buffer PMOS on and VBN is 11V above VEE for controlling the buffer NMOS on. Optional external capacitors can be placed from VDD to VBP and from VBN to VEE to minimize supply undershoot during switching transients.