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ZHCSDP1E January 2009 – February 2019 UC1842A-SP , UC1844A-SP

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

JG|8
- MCER001B

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

zhcsdp1e_oa

7.6 Electrical Characteristics (Radiation-Improved Devices)

V_CC = 15 V, R_T = 10 kΩ, C_T = 3.3 nF, T_A = T_J = –55°C to 125°C (unless otherwise noted) ⁽¹⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
REFERENCE
	Output voltage	T_J = 25°C, I_O = 1 mA	4.94	5	5.06	V
	Line regulation	V_CC = 12 to 25 V		6	20	mV
	Load regulation	I_L = 1 to 20 mA		6	25	mV
	Total output variation	Over line, load, and temperature	4.9		5.1	V
	Output noise voltage	10 Hz ≤ ƒ ≤ 10 kHz, T_J = 25°C		50		μV
	Short-circuit output current		–30	–100	–180	mA
OSCILLATOR
	Initial accuracy	T_J = 25°C	47	52	57	kHz
	Voltage stability	V_CC = 12 to 25 V		0.2%	1%
	Temperature stability	T_J = –55°C to 125°C		5%
	Amplitude	V_RT/CT peak to peak		1.7		V
	Discharge current⁽⁵⁾	T_J = 25°C, V_RT/CT = 2 V	7.8	8.3	8.8	mA
	Discharge current⁽⁵⁾	V_RT/CT = 2 V	7.5		8.8	mA
ERROR AMPLIFIER
	Input voltage	V_Comp = 2.5 V	2.45	2.50	2.55	V
	Input bias current			–0.3	–1	μA
	Open-loop voltage gain	V_O = 2 to 4 V	65	90		dB
	Unity-gain bandwidth	T_J = 25°C⁽²⁾	0.7	1		MHz
	PSRR	V_CC = 12 to 25 V	60	70		dB
	Output sink current	V_FB = 2.7 V, V_Comp = 1.1 V	2	6		mA
	Output source current	V_FB = 2.3 V, V_Comp = 5 V	–0.5	–0.8		mA
	High-level output voltage	V_FB = 2.3 V, R_L = 15 kΩ to ground	5	6		V
	Low-level output voltage	V_FB = 2.7 V, R_L = 15 kΩ to V_REF		0.7	1.1	V
CURRENT SENSE
	Gain⁽³⁾⁽⁴⁾		2.85	3	3.15	V/V
	Maximum input signal	V_Comp = 5 V⁽³⁾	0.9	1	1.1	V
	PSRR	V_CC = 12 to 25 V⁽³⁾		70		dB
	Input bias current			–2	–10	μA
	Delay to output	V_ISENSE = 0 to 2 V ⁽²⁾		150	300	ns
OUTPUT
	Output low-level voltage	I_SINK = 20 mA		0.1	0.4	V
	Output low-level voltage	I_SINK = 200 mA		1.5	2.2	V
	Output high-level voltage	I_SOURCE = 20 mA	13	13.5		V
	Output high-level voltage	I_SOURCE = 200 mA	12	13.0		V
	Rise time	C_L = 1 nF, T_J = 25°C⁽²⁾		50	150	ns
	Fall time	C_L = 1 nF, T_J = 25°C⁽²⁾		50	150	ns
	UVLO saturation	V_CC = 5 V, I_SINK = 10 mA		0.7	1.2	V
UNDERVOLTAGE LOCKOUT
	Start threshold		7.8	8.4	9	V
	Minimum operation voltage after turnon		7	7.6	8.2	V
PWM
	Maximum duty cycle		94%	96%	100%
	Minimum duty cycle				0%
TOTAL STANDBY CURRENT
	Start-up current			0.3	0.5	mA
	Operating supply current	V_FB = V_ISENSE = 0 V		11	17	mA
	V_CC Zener voltage	I_CC = 25 mA	30	34		V

(1) Electrical table applicable to radiation-improved 5962-8670409 device type

(2) Parameters ensured by design and/or characterization, if not production tested.

(3) Parameter measured at trip point of latch with V_FB = 0 V.

(4) Gain defined as: G = ΔV_Comp/ΔV_ISENSE; V_ISENSE = 0 to 0.8 V.

(5) This parameter is measured with R_T = 10 kΩ to V_REF. This contributes approximately 300 μA of current to the measurement. The total current flowing into the R_T or C_T pin will be approximately 300 μA higher than the measured value.