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ZHCSDG1 March 2015 TPS25200-Q1

PRODUCTION DATA.

封裝選項

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range, voltage are referenced to GND (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	IN	–0.3	20	V
	OUT, EN, ILIM, FAULT	–0.3	7	V
	From IN to OUT	–7	20	V
Continuous output current, I_O		Thermally Limited
Continuous FAULT output sink current			25	mA
Continuous ILIM output source current			150	µA
Operating junction temperature, T_J		Internally limited
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per AEC Q100-002⁽¹⁾		±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per AEC Q100-011		±750	V

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input voltage of IN	2.5	6.5	V
V_EN	Enable pin voltage	0	6.5	V
I_FAULT	Continuous FAULT sink current	0	10	mA
I_OUT	Continuous output current of OUT		2.4	A
R_ILIM	Current-limit set resistors	36	1100	kΩ
T_J	Operating junction temperature	–40	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		DRV (WSON)	UNIT
THERMAL METRIC⁽¹⁾		6 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	66.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	83.4
R_θJB	Junction-to-board thermal resistance	36.1
ψ_JT	Junction-to-top characterization parameter	1.6
ψ_JB	Junction-to-board characterization parameter	36.5
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.6

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Conditions are –40°C ≤ T_J ≤ 125°C and 2.5 V ≤ V_IN ≤ 6.5 V. V_EN = V_IN, R_ILIM = 36 kΩ. Positive current into pins. Typical value is at 25°C. All voltages are with respect to ground (unless otherwise noted).

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(on)	IN–OUT resistance⁽¹⁾	2.5 V ≤ V_IN ≤ 5 V, I_OUT = 2.4 A	T_J = 25°C		67	75	mΩ
			–40°C ≤ T_J ≤ 85°C		67	95
			–40°C ≤ T_J ≤ 125°C		67	105
ENABLE INPUT EN
	EN pin turn on threshold	Input rising				1.9	V
	EN pin turn off threshold	Input falling		0.6			V
	Hysteresis				330⁽²⁾		mV
I_EN	Leakage current	V_EN = 0 V or 5.5 V		–2		2	µA
DISCHARGE
R_DCHG	OUT Discharge Resistance	V_OUT = 5 V, V_EN = 0 V			500	625	Ω
CURRENT LIMIT
I_OS	Current-limit, see Figure 12	R_ILIM = 36 kΩ		2530	2700	2870	mA
		R_ILIM = 42.2 kΩ		2140	2300	2460
		R_ILIM = 56 kΩ		1620	1740	1860
		R_ILIM= 80.6 kΩ		1110	1206	1300
		R_ILIM = 150 kΩ		590	647	710
		R_ILIM = 1100 kΩ		40	83	130
OVERVOLTAGE LOCKOUT, IN
V_(OVLO)	IN rising OVLO threshold voltage	IN rising		6.8	7.6	8.45	V
	Hysteresis				70⁽²⁾		mV
VOLTAGE CLAMP, OUT
V_(OVC)	OUT clamp voltage threshold	C_L = 1 µF, R_L = 100 Ω, V_IN = 6.5 V		5.25	5.4	5.55	V
SUPPLY CURRENT
I_IN(off)	Supply current, low-level output	V_EN = 0 V, V_IN = 5 V			1	5	µA
I_IN(off)	Supply current, low-level output	V_EN = 0 or 5 V, V_IN = 20 V			1040	1700	µA
I_IN(on)	Supply current, high-level output	V_IN = 5 V, No load on OUT	R_ILIM = 36 kΩ		147	200	µA
I_IN(on)	Supply current, high-level output	V_IN = 5 V, No load on OUT	R_ILIM = 150 kΩ		120	190	µA
I_REV	Reverse leakage current	V_OUT = 6.5V, V_IN = V_EN = 0 V, T_J= 25°C, Measure I_OUT			3.2	5	µA
UNDERVOLTAGE LOCKOUT, IN
V_UVLO	IN rising UVLO threshold voltage	IN rising			2.35	2.45	V
	Hysteresis				30⁽²⁾		mV
FAULT FLAG
V_OL	Output low voltage, FAULT	I_FAULT = 1 mA			50	180	mV
	Off-state leakage	V_FAULT = 6.5 V				1	µA
THERMAL SHUTDOWN
	Thermal shutdown threshold, OTSD2⁽³⁾			155			°C
	Thermal shutdown threshold only in current-limit, OTSD1⁽³⁾			135
	Hysteresis				20⁽²⁾

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.

(2) These parameters are provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.

(3) For more information on the thermal sensors, OTSD1 and OTSD2, see the Thermal Sense section.

7.6 Switching Characteristics

Conditions are –40°C ≤ T_J ≤ 125°C and 2.5 V ≤ V_IN ≤ 6.5 V. V_EN = V_IN, R_ILIM = 36 kΩ. Positive current are into pins. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SWITCH
t_r	OUT voltage rise time	C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		2.05	3.2	ms
t_f	OUT voltage fall time	C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		0.18	0.2	ms
ENABLE INPUT EN
t_on	Turn-on time	2.5 V ≤ V_IN ≤ 5 V, C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		5.12	7.3	ms
t_off	Turn-off time	2.5 V ≤ V_IN ≤ 5 V, C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		0.22	0.3	ms
CURRENT LIMIT
t_(IOS)	Short-circuit response time	V_IN = 5 V (see Figure 12)		3.5⁽¹⁾		µs
OVERVOLTAGE LOCKOUT, IN
t_{(OVLO_off_delay)}	Turn-off Delay for OVLO	V_IN = 5 V to 10 V with 1 V/µs ramp-up rate, V_OUT with 100-Ω load		0.6⁽¹⁾		µs
FAULT FLAG
	FAULT deglitch	FAULT assertion or deassertion because of overcurrent condition	5	8	12	ms

(1) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.