| V(A), V©), VDD |
| VDD UVLO |
VDD rising |
2.25 |
|
2.5 |
V |
| Hysteresis |
|
0.25 |
|
| A current |
| I(A) |, Gate in active region |
|
0.66 |
1 |
mA |
| | I(A) |, Gate saturated high |
|
0.1 |
|
| C current |
| I©) |, V(AC) ≤ 0.1 V |
|
|
10 |
μA |
| VDD current |
Worst case, gate in active region |
|
4.25 |
6 |
mA |
| Gate saturated high |
|
1.2 |
|
| TURNON |
| TPS2412 forward turnon and regulation voltage |
|
7 |
10 |
13 |
mV |
| TPS2412 forward turnon / turnoff difference |
R(RSET) = open |
|
7 |
|
mV |
| TPS2413 forward turnon voltage |
|
7 |
10 |
13 |
mV |
| TURNOFF |
| Fast turnoff threshold voltage |
Gate sinks > 10 mA at V(GATE-A) = 2 V |
1 |
3 |
5 |
mV |
| V(A-C) falling, R(RSET) = open |
| V(A-C) falling, R(RSET) = 28.7 kΩ |
–17 |
–13.25 |
–10 |
| V(A-C) falling, R(RSET) = 3.24 kΩ |
–170 |
–142 |
–114 |
| Turnoff delay |
V(A) = 12 V, V(A-C): 20 mV → –20 mV,
V(GATE-A) begins to decrease |
|
70 |
|
ns |
| Turnoff time |
V(A) = 12 V, C(GATE-GND) = 0.01 μF, V(A-C):
20 mV → –20 mV, measure the period to
V(GATE) = V(A) |
|
130 |
|
ns |
| GATE |
| Gate positive drive voltage, V(GATE-A) |
VDD = 3 V, V(A-C) = 20 mV |
6 |
7 |
8 |
V |
| 5 V ≤ VDD ≤ 18 V, V(A-C) = 20 mV |
9 |
10.2 |
12.5 |
| Gate source current |
V(A-C) = 50 mV, V(GATE-A) = 4 V |
250 |
290 |
350 |
μA |
| Soft turnoff sink current (TPS2412) |
V(A-C) = 4 mV, V(GATE-A) = 2 V |
2 |
5 |
|
mA |
| Fast turnoff pulsed current, I(GATE) |
V(A-C) = –0.1 V |
|
|
|
A |
| V(GATE) = 8 V |
1.75 |
2.35 |
|
| V(GATE) = 5 V |
1.25 |
1.75 |
|
| Period |
7.5 |
12.5 |
|
μs |
| Sustain turnoff current, I(GATE) |
V(A-C) = –0.1 V, V©) ≤ VDD, 3 V ≤ VDD ≤ 18 V,
2 V ≤ V(GATE) ≤ 18 V |
15 |
19.5 |
|
mA |
| MISCELLANEOUS |
| Thermal shutdown temperature |
Temperature rising, TJ |
|
135 |
|
°C |
| Thermal hysteresis |
|
|
10 |
|
°C |