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ZHCSCN4F January 2014 – July 2017 TPS22968

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DPU|14
- MPSS042A

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

DPU|14
- QFND320

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT ⁽²⁾
V_IN1,2	Input voltage	–0.3	6	V
V_BIAS	Bias voltage	–0.3	6	V
V_OUT1,2	Output voltage	–0.3	6	V
V_ON1,2	ON voltage	–0.3	6	V
I_MAX	Maximum continuous switch current per channel, T_A = 30 °C		4	A
I_PLS	Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle		6	A
T_J	Maximum junction temperature		125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 ⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101 ⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

			MIN	MAX	UNIT
V_IN1,2	Input voltage		0.8	V_BIAS	V
V_BIAS	Bias voltage		2.5	5.5	V
V_ON1,2	ON voltage		0	5.5	V
V_OUT1,2	Output voltage			V_IN	V
V_{IH, ON1,2}	High-level input voltage, ON1,2	V_BIAS = 2.5 V to 5.5 V	1.2	5.5	V
V_{IL, ON1,2}	Low-level input voltage, ON1,2	V_BIAS = 2.5 V to 5.5 V	0	0.5	V
C_IN1,2	Input capacitor		1⁽¹⁾		µF
T_A	Operating free-air temperature ⁽²⁾		–40	105	°C

(1) See the Application Information section.

(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package in the application (R_θJA), as given by the following equation: T_A(max) = T_J(max) – (R_θJA × P_D(max)).

7.4 Thermal Information

THERMAL METRIC ⁽¹⁾ ⁽²⁾		TPS22968	UNIT
		DPU (WSON)
		14 PINS
R_θJA	Junction-to-ambient thermal resistance	62.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	70.2	°C/W
R_θJB	Junction-to-board thermal resistance	23.2	°C/W
ψ_JT	Junction-to-top characterization parameter	2.5	°C/W
ψ_JB	Junction-to-board characterization parameter	23.2	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	9	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.

7.5 Electrical Characteristics (V_BIAS = 5 V)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ T_A ≤ +105°C (full) and V_BIAS = 5 V. Typical values are for T_A = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, VBIAS}	V_BIAS quiescent current (both channels)	I_OUT1 = I_OUT2 = 0, V_IN1,2 = V_ON1,2 = V_BIAS = 5 V		–40°C to +105°C	55	70	µA
I_{Q, VBIAS}	V_BIAS quiescent current (single channel)	I_OUT1 = I_OUT2 = 0, V_ON2 = 0 V, V_IN1,2 = V_ON1 = V_BIAS = 5 V		–40°C to +105°C	55	68	µA
I_{SD, VBIAS}	V_BIASshutdown current	V_ON1,2 = 0 V, V_OUT1,2 = 0 V		–40°C to +105°C	1	2	µA
I_{SD, VIN1,2}	V_IN1,2 shutdown current (per channel)	V_ON1,2 = 0 V, V_OUT1,2 = 0 V	V_IN1,2 = 5 V	–40°C to +85°C	0.5	8	µA
			V_IN1,2 = 5 V	–40°C to +105°C		10
			V_IN1,2 = 3.3 V	–40°C to +85°C	0.1	3
			V_IN1,2 = 3.3 V	–40°C to +105°C		4
			V_IN1,2 = 1.8 V	–40°C to +85°C	0.07	2
			V_IN1,2 = 1.8 V	–40°C to +105°C		3
			V_IN1,2= 1.2 V	–40°C to +85°C	0.05	1
			V_IN1,2= 1.2 V	–40°C to +105°C		2
			V_IN1,2 = 0.8 V	–40°C to +85°C	0.04	1
			V_IN1,2 = 0.8 V	–40°C to +105°C		2
I_ON1,2	ON pin input leakage current	V_ON = 5.5 V		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	On-state resistance	I_OUT = –200 mA, V_BIAS = 5 V V_ON1,2 = 5 V	V_IN= 5 V	25°C	27	36	mΩ
				–40°C to +85°C		40
				–40°C to +105°C		42
			V_IN = 3.3 V	25°C	25	34	mΩ
				–40°C to +85°C		38
				–40°C to +105°C		40
			V_IN = 1.8 V	25°C	25	34	mΩ
				–40°C to +85°C		38
				–40°C to +105°C		40
			V_IN = 1.5 V	25°C	25	34	mΩ
				–40°C to +85°C		38
				–40°C to +105°C		40
			V_IN = 1.2 V	25°C	25	34	mΩ
				–40°C to +85°C		38
				–40°C to +105°C		40
			V_IN = 0.8 V	25°C	25	34	mΩ
				–40°C to +85°C		38
				–40°C to +105°C		40
R_PD ⁽¹⁾	Output pulldown resistance	V_IN = 5 V, V_ON = 0 V, I_OUT = 10 mA		–40°C to +105°C	270	320	Ω

(1) TPS22968 only.

7.6 Electrical Characteristics (V_BIAS = 2.5 V)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ T_A ≤ +105 °C (full) and V_BIAS = 2.5 V. Typical values are for T_A = 25°C (unless otherwise noted).

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, VBIAS}	V_BIAS quiescent current (both channels)	I_OUT1 = I_OUT2 = 0, V_IN1,2 = V_ON1,2 = V_BIAS = 2.5 V		–40°C to +105°C	18	27	µA
I_{Q, VBIAS}	V_BIAS quiescent current (single channel)	I_OUT1 = I_OUT2 = 0, V_ON2 = 0 V, V_IN1,2 = V_ON1 = V_BIAS = 2.5 V		–40°C to +105°C	18	27	µA
I_{SD, VBIAS}	V_BIASshutdown current	V_ON1,2 = 0 V, V_OUT1,2 = 0 V		–40°C to +105°C	0.5	2	µA
I_{SD, VIN1,2}	V_IN1,2 shutdown current (per channel)	V_ON1,2 = 0 V, V_OUT1,2 = 0 V	V_IN1,2 = 2.5 V	–40°C to +85°C	0.1	2	µA
			V_IN1,2 = 2.5 V	–40°C to +105°C		4
			V_IN1,2 = 1.8 V	–40°C to +85°C	0.07	2
			V_IN1,2 = 1.8 V	–40°C to +105°C		3
			V_IN1,2 = 1.2 V	–40°C to +85°C	0.05	1
			V_IN1,2 = 1.2 V	–40°C to +105°C		2
			V_IN1,2 = 0.8 V	–40°C to +85°C	0.04	1
			V_IN1,2 = 0.8 V	–40°C to +105°C		2
I_ON1,2	ON pin input leakage current	V_ON = 5.5 V		–40°C to +85°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	On-state resistance	I_OUT = –200 mA, V_BIAS = 2.5 V V_ON1,2 = 5 V	V_IN = 2.5 V	25°C	30	39	mΩ
				–40°C to +85°C		44
				–40°C to +105°C		46
			V_IN = 1.8 V	25°C	28	36	mΩ
				–40°C to +85°C		41
				–40°C to +105°C		43
			V_IN = 1.5 V	25°C	28	36	mΩ
				–40°C to +85°C		41
				–40°C to +105°C		43
			V_IN = 1.2 V	25°C	27	36	mΩ
				–40°C to +85°C		41
				–40°C to +105°C		43
			V_IN = 0.8 V	25°C	26	35	mΩ
				–40°C to +85°C		39
				–40°C to +105°C		41
R_PD ⁽¹⁾	Output pulldown resistance	V_IN = 2.5 V, V_ON = 0 V, I_OUT = 10 mA		–40°C to +105°C	270	320	Ω

(1) TPS22968 only.

7.7 Switching Characteristics

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = V_ON = V_BIAS = 5 V, T_A= 25 °C (unless otherwise noted)
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1128	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	5
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1387
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	455
V_IN = 0.8 V, V_ON = V_BIAS = 5 V, T_A = 25 ºC (unless otherwise noted)
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	508	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	33
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	273
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	377
V_IN = 2.5 V, V_ON = 5 V, V_BIAS = 2.5V, T_A = 25 ºC (unless otherwise noted)
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1718	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	7
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1701
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	859
V_IN = 0.8 V, V_ON = 5 V, V_BIAS = 2.5 V, T_A = 25 ºC (unless otherwise noted)
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1117	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	30
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	651
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	775

7.8 Typical DC Characteristics

V_IN1 = V_IN2 = V_BIAS	V_OUT = Open
V_ON1 = V_ON2= 5 V

Figure 1. Bias Voltage vs Quiescent Current
(Both Channels)

V_IN1 = V_IN2 = V_BIAS	V_OUT = 0 V
V_ON1 = V_ON2 = 0 V

Figure 3. Bias Voltage vs Shutdown Current
(Both Channels)

V_BIAS = 2.5 V
I_OUT = –200 mA

Figure 5. Temperature vs On-Resistance

V_BIAS = 2.5 V
I _OUT = –200 mA

Figure 7. Input Voltage vs On-Resistance

V_BIAS= 5 V	I_OUT = 1 mA
V_ON = 0 V

Figure 9. Input Voltage vs Pulldown Resistance (TPS22968 Only)
(Single Channel)

V_BIAS = 2.5 V
CT= 1 nF

Figure 11. Input Voltage vs Delay Time

V_BIAS = 2.5 V
CT = 1 nF

Figure 13. Input Voltage vs Fall Time

V_BIAS = 2.5 V
CT = 1 nF

Figure 15. Input Voltage vs Turnoff Time

V_BIAS = 2.5 V
CT = 1 nF

Figure 17. Input Voltage vs Turnon Time

V_BIAS = 2.5 V
CT = 1 nF

Figure 19. Input Voltage vs Rise Time

V_IN1 = V_IN2 = V_BIAS	V_ON2 = 0 V
V_ON1 = 5 V	V_OUT = Open

Figure 2. Bias Voltage vs Quiescent Current
(Single Channel)

V_BIAS = 5 V	V_OUT = 0 V
V_ON1 = V_ON2 = 0 V

Figure 4. Input Voltage vs Shutdown Current

V_BIAS = 5 V
I_OUT = –200 mA

Figure 6. Temperature vs On-Resistance

V_BIAS= 5 V
I_OUT = –200 mA

Figure 8. Input Voltage vs On-Resistance

T_A = 25°C
V_IN = 2 V

Figure 10. ON Voltage vs Output Voltage

V_BIAS = 5 V
CT = 1 nF

Figure 12. Input Voltage vs Delay Time

V_BIAS = 5 V
CT = 1 nF

Figure 14. Input Voltage vs Fall Time

V_BIAS = 5 V
CT = 1 nF

Figure 16. Input Voltage vs Turnoff Time

V_BIAS = 5 V
CT = 1 nF

Figure 18. Input Voltage vs Turnon Time

V_BIAS = 5 V
CT = 1 nF

Figure 20. Input Voltage vs Rise Time

7.9 Typical AC Characteristics

V_IN = 0.8 V	V_BIAS = 2.5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 21. Turnon Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 23. Turnon Response Time

V_IN = 0.8 V	V_BIAS = 2.5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 25. TurnOff Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 27. Turnoff Response Time

V_IN = 0.8 V	V_BIAS = 5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 22. Turnon Response Time

V_IN = 5 V	V_BIAS = 5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 24. Turnon Response Time

V_IN = 0.8 V	V_BIAS = 5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 26. Turnoff Response Time

V_IN = 5 V	V_BIAS = 5 V	C_IN = 1 µF
R_L = 10 Ω		C_L = 0.1 µF

Figure 28. Turnon Response Time