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SLVS036N September 1981 – January 2015 TL783

PRODUCTION DATA.

封裝選項(xiàng)

機(jī)械數(shù)據(jù) (封裝 | 引腳)

KCS|3
- MPSF053A

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_l – V_O	Input-to-output differential voltage		125	V
T_J	Operating virtual junction temperature		150	°C
T_stg	Storage temperature range	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	2500	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

		MIN	MAX	UNIT
V_l – V_O	Input-to-output differential voltage		125	V
I_O	Output current	15	700	mA
T_J	Operating virtual junction temperature	0	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TL783			UNIT
		KTE	KTT	KC
		3 PINS
R_θJA	Junction-to-ambient thermal resistance	23	25.3	19	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	N/A	18	17
R_θJP	Junction-to-exposed-pad thermal resistance	2.7	1.94	3

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

V_l – V_O = 25 V, I_O = 0.5 A, T_J = 0°C to 125°C (unless otherwise noted)

PARAMETER	TEST CONDITIONS⁽¹⁾		MIN	TYP	MAX	UNIT
Input voltage regulation⁽²⁾	V_l – V_O = 20 V to 125 V, P ≤ rated dissipation	T_J = 25°C		0.001	0.01	%/V
Input voltage regulation⁽²⁾	V_l – V_O = 20 V to 125 V, P ≤ rated dissipation	T_J = 0°C to 125°C		0.004	0.02	%/V
Ripple rejection	ΔV_I(PP) = 10 V, V_O = 10 V, f = 120 Hz		66	76		dB
Output voltage regulation	I_O = 15 mA to 700 mA, T_J = 25°C	V_O ≤ 5 V		7.5	25	mV
	I_O = 15 mA to 700 mA, T_J = 25°C	V_O ≥ 5 V		0.15%	0.5%	—
	I_O = 15 mA to 700 mA, P ≤ rated dissipation	V_O ≤ 5 V		20	70	mV
	I_O = 15 mA to 700 mA, P ≤ rated dissipation	V_O ≥ 5 V		0.3%	1.5%	—
Output voltage change with temperature				0.4%
Output voltage long-term drift	1000 hours at T_J = 125°C, V_l – V_O = 125 V			0.2%
Output noise voltage	f = 10 Hz to 10 kHz, T_J = 25°C			0.003%
Minimum output current to maintain regulation	V_l – V_O = 125 V				15	mA
Peak output current	V_l – V_O = 25 V, t = 1 ms			1100		mA
	V_l – V_O = 15 V, t = 30 ms			715
	V_l – V_O = 25 V, t = 30 ms		700	900
	V_l – V_O = 125 V, t = 30 ms		100	250
ADJ input current				83	110	μA
Change in ADJ input current	V_l – V_O = 15 V to 125 V, I_O = 15 mA to 700 mA, P ≤ rated dissipation			0.5	5	μA
Reference voltage (OUT to ADJ)⁽³⁾	V_l – V_O = 10 V to 125 V, I_O = 15 mA to 700 mA, P ≤ rated dissipation		1.2	1.27	1.3	V

(1) Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be taken into account separately.

(2) Input voltage regulation is expressed here as the percentage change in output voltage per 1-V change at the input

(3) Due to the dropout voltage and output current-limiting characteristics of this device, output current is limited to less than 700 mA at input-to-output voltage differentials of less than 25 V.