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SNOSB28G August 2010 – November 2014 LMP8640 , LMP8640-Q1 , LMP8640HV

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

DDC|6
- MPDS124I

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾⁽²⁾⁽³⁾

LMP8640 limits also apply to the LMP8640-Q1.

		MIN	MAX	UNIT
Supply Voltage (V_S = V⁺ - V⁻)		-0.3	13.2	V
Differential Voltage +IN- (-IN)		-6	6	V
Voltage at pins +IN, -IN	LMP8640HV	-6	80	V
Voltage at pins +IN, -IN	LMP8640, LMP8640-Q1	-6	60	V
Voltage at V_OUT pin		V^-	V⁺	V
Junction Temperature ⁽⁴⁾		-40	150	°C

(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Operating Ratings is not implied. Operating Ratings indicate conditions at which the device is functional and the device should not be operated beyond such conditions.

(2) For soldering specifications,see product folder at www.ti.com and http://www.ti.com/lit/SNOA549.

(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by T_J(MAX), θ_JA, and the ambient temperature, T_A. The maximum allowable power dissipation P_DMAX = (T_J(MAX) - T_A)/ θ_JA or the number given in Absolute Maximum Ratings, whichever is lower.

7.2 Handling Ratings - LMP8640, LMP8640HV

				MIN	MAX	UNIT
T_stg	Storage temperature range			-65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM⁽¹⁾)	For input pins +IN, -IN	-5000	5000	V
		Human body model (HBM⁽¹⁾)	For all other pins	-2000	2000
		Charged device model (CDM)⁽²⁾	All pins	-1250	1250
		Machine model (MM) ⁽³⁾		-200	200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3) Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)

7.3 Handling Ratings - LMP8640-Q1

				MIN	MAX	UNIT
T_stg	Storage temperature range			-65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per AEC Q100-002⁽¹⁾		-2000	2000	V
		Charged device model (CDM), per AEC Q100-011	All pins	-1000	1000	V
		Machine model (MM) ⁽²⁾	All pins	-200	200

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

(2) Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)

7.4 Recommended Operating Conditions⁽¹⁾

	MIN	MAX	UNIT
Supply Voltage (V_S = V⁺ - V⁻)	2.7	12	V
Operating Junction Temperature Range ⁽⁴⁾	-40	125	°C

7.5 Thermal Information

THERMAL METRIC⁽¹⁾		LMP8640 LMP8640HV LMP8640-Q1	UNIT
		THIN SOT-23
		6 PINS
R_θJA	Junction-to-ambient thermal resistance ⁽⁴⁾	165	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	28
R_θJB	Junction-to-board thermal resistance	24.6
ψ_JT	Junction-to-top characterization parameter	0.3
ψ_JB	Junction-to-board characterization parameter	23.8

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.6 Electrical Characteristics 2.7 V ⁽¹⁾

Unless otherwise specified, all limits ensured for at T_A = 25°C, V_S= V⁺– V^-, V_SENSE= +IN-(-IN), V⁺ = 2.7 V, V⁻ = 0 V, −2 V < V_CM < 76 V, R_L = 10 MΩ. LMP8640 limits also apply to the LMP8640-Q1.

PARAMETER		TEST CONDITIONS	MIN⁽³⁾	TYP⁽²⁾	MAX⁽³⁾	UNIT
V_OS	Input Offset Voltage	V_CM = 2.1 V	-900		900	µV
V_OS	Input Offset Voltage	V_CM = 2.1 V, Over Temperature	-1160		1160	µV
TCV_OS	Input Offset Voltage Drift⁽⁴⁾⁽⁶⁾	V_CM = 2.1 V			2.6	µV/°C
I_B	Input Bias Current ⁽⁷⁾	V_CM = 2.1 V, V_SENSE = 0 V		12	20	µA
I_B	Input Bias Current ⁽⁷⁾	V_CM = 2.1 V, Over Temperature, V_SENSE = 0 V			27	µA
e_ni	Input Voltage Noise ⁽⁶⁾	f > 10 kHz		117		nV/√Hz
Gain A_V	Gain LMP8640-T LMP8640HV-T			20		V/V
	Gain LMP8640-F LMP8640HV-F			50
	Gain LMP8640-H LMP8640HV-H			100
	Gain error	V_CM = 2.1 V	-0.25%		0.25%
	Gain error	V_CM = 2.1 V, Over Temperature	-0.51%		0.51%
	Accuracy over temperature⁽⁶⁾	V_CM= 2.1V, Over Temperature			26.2	ppm/°C
PSRR	Power Supply Rejection Ratio	V_CM = 2.1 V, 2.7 V < V⁺ < 12 V,	85			dB
CMRR	Common Mode Rejection Ratio	LMP8640HV 2.1 V < V_CM < 42 V LMP8640 2.1 V < V_CM< 42 V	103			dB
		LMP8640HV 2.1 V < V_CM < 76 V	95
		-2 V <V_CM< 2 V,	60
BW	Fixed Gain LMP8640-T LMP8640HV-T ⁽⁶⁾	DC V_SENSE = 67.5 mV, C_L = 30 pF,R_L= 1MΩ		950		kHz
	Fixed Gain LMP8640-F LMP8640HV-F ⁽⁶⁾	DC V_SENSE =27 mV, C_L = 30 pF, R_L= 1MΩ		450
	Fixed Gain LMP8640-H LMP8640HV-H ⁽⁶⁾	DC V_SENSE = 13.5 mV, C_L = 30 pF ,R_L= 1 MΩ		230
SR	Slew Rate ⁽⁵⁾⁽⁶⁾	V_CM =5 V, C_L = 30 pF, R_L = 1 MΩ, LMP8640-T LMP8640HV-T V_SENSE =100 mVpp, LMP8640-F LMP8640HV-F V_SENSE =40 mVpp, LMP8640-H LMP8640HV-H V_SENSE =20 mVpp,		1.4		V/µs
R_IN	Differential Mode Input Impedance⁽⁶⁾			5		kΩ
I_S	Supply Current	V_CM = 2.1 V		420	600	µA
		V_CM = 2.1 V, Over Temperature			800
		V_CM = −2 V		2000	2500
		V_CM = −2 V, Over Temperature			2750
V_OUT	Maximum Output Voltage	V_CM = 2.1 V	2.65			V
	Minimum Output Voltage	LMP8640-T LMP8640HV-T V_CM = 2.1 V			18.2	mV
		LMP8640-F LMP8640HV-F V_CM = 2.1 V			40
		LMP8640-H LMP8640HV-H V_CM = 2.1 V			80
C_LOAD	Max Output Capacitance Load⁽⁶⁾			30		pF

(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T_J > T_A. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.

(2) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(3) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.

(4) Offset voltage temperature drift is determined by dividing the change in V_OS at the temperature extremes by the total temperature change.

(5) The number specified is the average of rising and falling slew rates and measured at 90% to 10%.

(6) This parameter is ensured by design and/or characterization and is not tested in production.

(7) Positive Bias Current corresponds to current flowing into the device. Spec does not include input signal dependent currents on the positive input of approximately Vsense / 5KΩ due to topology feedback action.

7.7 Electrical Characteristics 5 V ⁽¹⁾

Unless otherwise specified, all limits ensured for at T_A = 25°C, V_S= V⁺– V^-, V_SENSE= +IN-(-IN), V⁺ = 5 V, V⁻ = 0 V, −2 V < V_CM < 76 V, R_L = 10 MΩ. LMP8640 electrical limits also apply to the LMP8640-Q1 unless noted.

PARAMETER		TEST CONDITIONS	MIN⁽³⁾	TYP⁽²⁾	MAX⁽³⁾	UNIT
V_OS	Input Offset Voltage	V_CM = 2.1 V	-900		900	µV
V_OS	Input Offset Voltage	V_CM = 2.1 V, Over Temperature	-1160		1160	µV
TCV_OS	Input Offset Voltage Drift⁽⁴⁾⁽⁶⁾	V_CM = 2.1 V			2.6	µV/°C
I_B	Input Bias Current ⁽⁷⁾	V_CM = 2.1 V, V_SENSE = 0 V		13	21	µA
I_B	Input Bias Current ⁽⁷⁾	V_CM = 2.1 V, Over Temperature,V_SENSE = 0 V			28	µA
e_ni	Input Voltage Noise ⁽⁶⁾	f > 10 kHz		117		nV/√Hz
Gain A_V	Gain LMP8640-T LMP8640HV-T			20		V/V
	Gain LMP8640-F LMP8640HV-F			50
	Gain LMP8640-H LMP8640HV-H			100
	Gain error	V_CM = 2.1 V	-0.25%		0.25%
	Gain error	V_CM = 2.1 V, Over Temperature	-0.51%		0.51%
	Accuracy over temperature⁽⁶⁾	−40°C to 125°C, V_CM=2.1 V			26.2	ppm/°C
PSRR	Power Supply Rejection Ratio	V_CM = 2.1 V, 2.7V < V⁺ < 12 V,	85			dB
CMRR	Common Mode Rejection Ratio	LMP8640HV 2.1 V < V_CM < 42 V LMP8640 2.1 V < V_CM< 42 V	103			dB
		LMP8640HV 2.1 V < V_CM < 76 V	95
		-2 V <V_CM< 2 V,	60
BW	Fixed Gain LMP8640-T LMP8640HV-T ⁽⁶⁾	DC V_SENSE = 67.5 mV, C_L = 30 pF ,R_L= 1 MΩ		950		kHz
	Fixed Gain LMP8640-F LMP8640HV-F⁽⁶⁾	DC V_SENSE =27 mV, C_L = 30 pF ,R_L= 1 MΩ		450
	Fixed Gain LMP8640-H LMP8640HV-H⁽⁶⁾	DC V_SENSE = 13.5 mV, C_L = 30 pF ,R_L= 1MΩ		230
SR	Slew Rate ⁽⁵⁾⁽⁶⁾	V_CM =5 V, C_L = 30 pF, R_L = 1MΩ, LMP8640-T LMP8640HV-T V_SENSE = 200 mVpp, LMP8640-F LMP8640HV-F V_SENSE = 80 mVpp, LMP8640-H LMP8640HV-H V_SENSE = 40 mVpp,		1.6		V/µs
R_IN	Differential Mode Input Impedance⁽⁶⁾			5		kΩ
I_S	Supply Current	V_CM = 2.1 V		500	722	µA
		V_CM = 2.1 V, Over Temperature			922
		V_CM = −2 V		2050	2500
		V_CM = −2 V, Over Temperature			2750
V_OUT	Maximum Output Voltage	V_CM = 2.1 V	4.95			V
	Minimum Output Voltage	LMP8640-T LMP8640HV-T V_CM = 2.1 V			18.2	mV
		LMP8640-F LMP8640HV-F V_CM = 2.1 V			40
		LMP8640-H LMP8640HV-H V_CM = 2.1 V			80
C_LOAD	Max Output Capacitance Load⁽⁶⁾			30		pF

7.8 Electrical Characteristics 12 V ⁽¹⁾

Unless otherwise specified, all limits ensured for at T_A = 25°C, V_S= V⁺– V^-, V_SENSE= +IN-(-IN), V⁺ = 12 V, V⁻ = 0V, −2 V < V_CM < 76 V, R_L = 10 MΩ. LMP8640 electrical limits also apply to the LMP8640-Q1 unless noted.

PARAMETER		TEST CONDITIONS	MIN⁽³⁾	TYP⁽²⁾	MAX⁽³⁾	UNIT
V_OS	Input Offset Voltage	V_CM = 2.1 V	-900		900	µV
V_OS	Input Offset Voltage	V_CM = 2.1 V, Over Temperature	-1160		1160	µV
TCV_OS	Input Offset Voltage Drift⁽⁴⁾⁽⁶⁾	V_CM = 2.1 V			2.6	µV/°C
I_B	Input Bias Current ⁽⁷⁾	V_CM = 2.1 V, V_SENSE = 0 V		13	22	µA
I_B	Input Bias Current ⁽⁷⁾	V_CM = 2.1 V, Over Temperature, V_SENSE = 0 V			28	µA
e_ni	Input Voltage Noise ⁽⁶⁾	f > 10 kHz		117		nV/√Hz
Gain A_V	Gain LMP8640-T LMP8640HV-T			20		V/V
	Gain LMP8640-F LMP8640HV-F			50
	Gain LMP8640-H LMP8640HV-H			100
	Gain error	V_CM = 2.1 V	-0.25%		0.25%
	Gain error	V_CM = 2.1 V, Over Temperature	-0.51%		0.51%
	Accuracy over temperature⁽⁶⁾	−40°C to 125°C, V_CM= 2.1 V			26.2	ppm/°C
PSRR	Power Supply Rejection Ratio	V_CM = 2.1 V, 2.7 V < V⁺ < 12 V,	85			dB
CMRR	Common Mode Rejection Ratio	LMP8640HV 2.1 V < V_CM < 42 V LMP8640 2.1 V < V_CM< 42 V	103			dB
		LMP8640HV 2.1 V < V_CM < 76 V	95
		-2 V < V_CM< 2 V,	60
BW	Fixed Gain LMP8640-T LMP8640HV-T ⁽⁶⁾	DC V_SENSE = 67.5 mV, C_L = 30 pF, R_L= 1 MΩ		950		kHz
	Fixed Gain LMP8640-F LMP8640HV-F ⁽⁶⁾	DC V_SENSE =27 mV, C_L = 30 pF, R_L= 1 MΩ		450
	Fixed Gain LMP8640-H LMP8640HV-H ⁽⁶⁾	DC V_SENSE = 13.5 mV, C_L = 30 pF, R_L= 1 MΩ		230
SR	Slew Rate ⁽⁵⁾⁽⁶⁾	V_CM =5 V, C_L = 30 pF, R_L = 1 MΩ, LMP8640-T LMP8640HV-T V_SENSE = 500 mVpp, LMP8640-F LMP8640HV-F V_SENSE =200 mVpp, LMP8640-H LMP8640HV-H V_SENSE =100 mVpp,		1.8		V/µs
R_IN	Differential Mode Input Impedance⁽⁶⁾			5		kΩ
I_S	Supply Current	V_CM = 2.1 V		720	1050	µA
		V_CM = 2.1 V, Over Temperature			1250
		V_CM = −2 V		2300	2800
		V_CM = −2 V, Over Temperature			3000
V_OUT	Maximum Output Voltage	V_CM = 2.1 V	11.85			V
	Minimum Output Voltage	LMP8640-T LMP8640HV-T V_CM = 2.1 V			18.2	mV
		LMP8640-F LMP8640HV-F V_CM = 2.1 V			40
		LMP8640-H LMP8640HV-H V_CM = 2.1 V			80
C_LOAD	Max Output Capacitance Load⁽⁶⁾			30		pF