ZHCSO71A June 2021 – December 2021 LM74701-Q1
PRODUCTION DATA
- 1 特性
- 2 應用
- 3 說明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機械數(shù)據(jù) (封裝 | 引腳)
- DDF|8
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
8.3.3 Gate Driver
The gate driver is used to control the external N-Channel MOSFET by setting the GATE to ANODE voltage to the corresponding mode of operation. There are four defined modes of operation that the gate driver operates under forward regulation, full conduction mode, reverse current protection and VDS clamp mode according to the ANODE to CATHODE voltage. These modes of operation are described in more detail in the Regulated Conduction Mode, Full Conduction Mode, Reverse Current Protection Mode and VDS Clamp Mode sections. Figure 8-2 depicts how the modes of operation vary according to the ANODE to CATHODE voltage of the LM74701-Q1. The threshold between forward regulation mode and conduction mode is when the ANODE to CATHODE voltage is 50 mV. The threshold between forward regulation mode and reverse current protection mode is when the ANODE to CATHODE voltage is –11 mV. The threshold between reverse current protection mode and VDS clamp mode is when the ANODE to CATHODE voltage is –39-V typical.
Figure 8-2 Gate Driver Mode TransitionsBefore the gate driver is enabled following three conditions must be achieved:
- The EN pin voltage must be greater than the specified input high voltage.
- The VCAP to ANODE voltage must be greater than the undervoltage lockout voltage.
- The ANODE voltage must be greater than VANODE POR Rising threshold.