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ZHCSLJ7A June 2021 – June 2021 LM5146

PRODUCTION DATA

封裝選項

機械數據 (封裝 | 引腳)

RGY|20
- MPQF116H

散熱焊盤機械數據 (封裝 | 引腳)

RGY|20
- QFND755

訂購信息

7.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits apply over the –40°C to 150°C junction temperature range unless otherwise stated. V_VIN = 48 V, V_EN/UVLO = 1.5 V, R_RT = 25 kΩ unless otherwise stated. ⁽¹⁾ ⁽²⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY
V_IN	Operating input voltage range	I_VCC ≤ 10 mA at V_VIN = 5.5 V	5.5		100	V
I_Q-RUN	Operating input current, not switching	V_EN/UVLO = 1.5 V, V_SS/TRK = 0 V		1.8	2.1	mA
I_Q-STBY	Standby input current	V_EN/UVLO = 1 V		1.75	2	mA
I_Q-SHDN	Shutdown input current	V_EN/UVLO = 0 V, V_VCC < 1 V		13.5	30	μA
VCC REGULATOR
V_VCC	VCC regulation voltage	V_SS/TRK = 0 V, 9 V ≤ V_VIN ≤ 100 V, 0 mA ≤ I_VCC ≤ 20 mA	7.3	7.5	7.7	V
V_VCC-LDO	VIN to VCC dropout voltage	V_VIN = 6 V, V_SS/TRK = 0 V, I_VCC = 20 mA		0.25	0.72	V
I_SC-LDO	VCC short-circuit current	V_SS/TRK = 0 V, V_VCC = 0 V	40	50	70	mA
V_VCC-UV	VCC undervoltage threshold	V_VCC rising	4.8	4.93	5.2	V
V_VCC-UVH	VCC undervoltage hysteresis	Rising threshold – falling threshold		0.26		V
V_VCC-EXT	Minimum external bias voltage	Voltage required to disable VCC regulator	8			V
I_VCC	External VCC input current, not switching	V_SS/TRK = 0 V, V_VCC = 13 V			2.3	mA
ENABLE AND INPUT UVLO
V_SHDN	Shutdown to standby threshold	V_EN/UVLO rising		0.42		V
V_SHDN-HYS	Shutdown threshold hysteresis	EN/UVLO Rising threshold – falling threshold		50		mV
V_EN	Standby to operating threshold	V_EN/UVLO rising	1.164	1.2	1.236	V
I_EN-HYS	Standby to operating hysteresis current	V_EN/UVLO = 1.5 V	9	10	11	μA
ERROR AMPLIFIER
V_REF	FB reference Voltage	FB connected to COMP	792	800	808	mV
I_FB-BIAS1	FB input bias current	V_FB = 0.8 V, –40°C ≤ T_J ≤ 125°C	–0.1		0.1	μA
I_FB-BIAS2	FB input bias current	V_FB= 0.8 V, –40℃ ≤ T_J≤ 150℃	–0.2		0.2	μA
V_COMP-OH	COMP output high voltage	V_FB = 0 V, COMP sourcing 1 mA		5		V
V_COMP-OL	COMP output low voltage	COMP sinking 1 mA			0.3	V
AVOL	DC gain			94		dB
GBW	Unity gain bandwidth			6.5		MHz
SOFT-START and VOLTAGE TRACKING
I_SS	SS/TRK capacitor charging current	V_SS/TRK = 0 V	8.5	10	12	μA
R_SS	SS/TRK discharge FET resistance	V_EN/UVLO = 1 V, V_SS/TRK = 0.1 V		11		Ω
V_SS-FB	SS/TRK to FB offset		–15	0	15	mV
V_SS-CLAMP	SS/TRK clamp voltage	V_SS/TRK – V_FB, V_FB = 0.8 V		115		mV
POWER GOOD INDICATOR
PG_UTH	FB upper threshold for PGOOD high to low	% of V_REF, V_FB rising	106%	108%	110%
PG_LTH	FB lower threshold for PGOOD high to low	% of V_REF, V_FB falling	90%	92%	94%
PG_{HYS_U}	PGOOD upper theshold hysteresis	% of V_REF		3%
PG_{HYS_L}	PGOOD lower threshold hysteresis	% of V_REF		2%
T_PG-RISE	PGOOD rising filter	FB to PGOOD rising edge		25%		μs
T_PG-FALL	PGOOD falling filter	FB to PGOOD falling edge		25%		μs
V_PG-OL	PGOOD low state output voltage	V_FB = 0.9 V, I_PGOOD = 2 mA			150	mV
I_PG-OH	PGOOD high state leakage current	V_FB = 0.8 V, V_PGOOD = 13 V			400	nA
OSCILLATOR
F_SW1	Oscilator frequency – 1	R_RT = 100 kΩ		100		kHz
F_SW2	Oscillator frequency – 2	R_RT = 25 kΩ	380	400	420	kHz
F_SW3	Oscillator frequency – 3	R_RT = 12.5 kΩ		780		kHz
SYNCHRONIZATION INPUT AND OUTPUT
F_SYNC	SYNCIN external clock frequency range	% of nominal frequency set by R_RT	–20%		50%
V_SYNC-IH	SYNCIN input logic high		2			V
V_SYNC-IL	SYNCIN input logic low				0.8	V
R_SYNC-IN	SYNCIN input resistance	V_SYNCIN = 3 V		20		kΩ
T_SYNCI-PW	SYNCIN input minimum pulsewidth	Minimum high state or low state duration	50			ns
V_SYNCO-OH	SYNCOUT high-state output voltage	I_SYNCOUT = –1 mA (sourcing current)	3			V
V_SYNCO-OL	SYNCOUT low-state output voltage	I_SYNCOUT = 1 mA (sinking current)			0.4	V
T_SYNCOUT	Delay from HO rising to SYNCOUT leading edge	V_SYNCIN = 0 V, T_S = 1/F_SW, F_SW set by R_RT		T_S/2 – 140		ns
T_SYNCIN	Delay from SYNCIN rising to HO leading edge	50% to 50%		150		ns
GATE DRIVERS
R_HO-UP	HO high state resistance, HO to BST	V_BST – V_SW = 7 V, I_HO = –100 mA		1.5		Ω
R_HO-DOWN	HO low state resistance, HO to SW	V_BST – V_SW = 7 V, I_HO = 100 mA		0.9		Ω
R_LO-UP	LO high state resistance, LO to VCC	V_BST – V_SW = 7 V, I_LO = –100 mA		1.5		Ω
R_LO-DOWN	LO low state resistance, LO to PGND	V_BST – V_SW = 7 V, I_LO = 100 mA		0.9		Ω
I_HOH, I_LOH	HO, LO source current	V_BST – V_SW = 7 V, HO = SW, LO = AGND		2.3		A
I_HOL, I_LOL	HO, LO sink current	V_BST – V_SW = 7 V, HO = BST, LO = VCC		3.5		A
BOOTSTRAP DIODE AND UNDERVOLTAGE THRESHOLD
V_BST-FWD	Diode forward voltage, VCC to BST	VCC to BST, BST pin sourcing 20 mA		0.75	0.9	V
I_Q-BST	BST to SW quiescent current, not switching	V_SS/TRK = 0 V, V_SW = 48 V, V_BST = 54 V		80		μA
V_BST-UV	BST to SW undervoltage detection	V_BST – V_SW falling		3.4		V
V_BST-HYS	BST to SW undervoltage hysteresis	V_BST – V_SW rising		0.42		V
PWM CONTROL
t_ON(min)	Minimum controllable on-time	V_BST – V_SW = 7 V, HO 50% to 50%		40	60	ns
t_OFF(min)	Minimum off-time	V_BST – V_SW = 7 V, HO 50% to 50%		140	200	ns
DC_100kHz	Maximum duty cycle	F_SW = 100 kHz, 6 V ≤ V_VIN ≤ 60 V	98	99		%
DC_400kHz	Maximum duty cycle	F_SW = 400 kHz, 6 V ≤ V_VIN ≤ 60 V	90	94		%
V_RAMP(min)	RAMP valley voltage (COMP at 0% duty cycle)			300		mV
k_FF	PWM feedforward gain (V_IN / V_RAMP)	6 V ≤ V_VIN ≤ 100 V		15		V/V
OVER CURRENT PROTECT (OCP) – VALLEY CURRENT LIMITING
I_RS	ILIM source current, R_SENSE mode	Low voltage detected at ILIM	90	100	110	μA
I_RDSON	ILIM source current, R_DS-ON mode	SW voltage detected at ILIM, T_J = 25°C	180	200	220	μA
I_RDSONTC	ILIM current tempco	R_DS-ON mode		4500		ppm/°C
I_RSTC	ILIM current tempco	R_SENSE mode		0		ppm/°C
V_ILIM-TH	ILIM comparator threshold at ILIM		–8	–2	3.5	mV
SHORT CIRCUIT PROTECTION (SCP) – DUTY CYCLE CLAMP
V_CLAMP-OS	Clamp offset voltage – no current limiting	COMP to duty cycle clamp voltage		0.2 + V_VIN/75		V
V_CLAMP-MIN	Minimum clamp voltage	Clamp voltage with continuous current limit		0.3 + V_VIN/150		V
HICCUP MODE FAULT PROTECTION
C_HICC-DEL	Hiccup mode activation delay	Clock cycles with current limiting before off-time activated		128		cycles
C_HICCUP	Hiccup mode off time after activation	Clock cycles with no switching followed by SS/TRK release		8192		cycles
DIODE EMULATION / DCM OPERATION
V_ZCD-SS	Zero-cross detect (ZCD) soft-start ramp	ZCD threshold measured at SW pin 50 cycles after first HO pulse		0		mV
V_ZCD-DIS	Zero-cross detect disable threshold	ZCD threshold measured at SW pin 1000 cycles after first HO pulse		200		mV
V_DEM-TH	Diode emulation zero-cross threshold	Measured at SW with V_SW rising	–5	0	5	mV
THERMAL SHUTDOWN
T_SD	Thermal shutdown threshold	T_J rising		175		°C
T_SD-HYS	Thermal shutdown hysteresis			20		°C

(1) All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and applied statistical process control.

(2) The junction temperature (T_Jin ℃) is calculated from the ambient temperature (T_A in ℃) and power dissipation (P_Din Watts) as follows: T_J = T_A + (P_D × R_ΘJA) where R_ΘJA (in ℃/W) is the package thermal impedance provided in Section 7.4.