ZHCSI53A May 2018 – November 2018 LM5122ZA
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Undervoltage Lockout (UVLO)
- 7.3.2 High-Voltage VCC Regulator
- 7.3.3 Oscillator
- 7.3.4 Slope Compensation
- 7.3.5 Error Amplifier
- 7.3.6 PWM Comparator
- 7.3.7 Soft Start
- 7.3.8 HO and LO Drivers
- 7.3.9 Bypass Operation (VOUT = VIN)
- 7.3.10 Cycle-by-Cycle Current Limit
- 7.3.11 Clock Synchronization
- 7.3.12 Maximum Duty Cycle
- 7.3.13 Thermal Protection
- 7.4 Device Functional Modes
-
8 Application and Implementation
- 8.1
Application Information
- 8.1.1 Feedback Compensation
- 8.1.2 Sub-Harmonic Oscillation
- 8.1.3 Interleaved Boost Configuration
- 8.1.4 DCR Sensing
- 8.1.5 Output Overvoltage Protection
- 8.1.6 SEPIC Converter Simplified Schematic
- 8.1.7 Non-Isolated Synchronous Flyback Converter Simplified Schematic
- 8.1.8 Negative to Positive Conversion
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Timing Resistor RT
- 8.2.2.2 UVLO Divider RUV2, RUV1
- 8.2.2.3 Input Inductor LIN
- 8.2.2.4 Current Sense Resistor RS
- 8.2.2.5 Current Sense Filter RCSFP, RCSFN, CCS
- 8.2.2.6 Slope Compensation Resistor RSLOPE
- 8.2.2.7 Output Capacitor COUT
- 8.2.2.8 Input Capacitor CIN
- 8.2.2.9 VIN Filter RVIN, CVIN
- 8.2.2.10 Bootstrap Capacitor CBST and Boost Diode DBST
- 8.2.2.11 VCC Capacitor CVCC
- 8.2.2.12 Output Voltage Divider RFB1, RFB2
- 8.2.2.13 Soft-Start Capacitor CSS
- 8.2.2.14 Restart Capacitor CRES
- 8.2.2.15 Low-Side Power Switch QL
- 8.2.2.16 High-Side Power Switch QH and Additional Parallel Schottky Diode
- 8.2.2.17 Snubber Components
- 8.2.2.18 Loop Compensation Components CCOMP, RCOMP, CHF
- 8.2.3 Application Curves
- 8.1
Application Information
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- PWP|24
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- PWP|24
訂購(gòu)信息
8.2.2.10 Bootstrap Capacitor CBST and Boost Diode DBST
The bootstrap capacitor between the BST and SW pin supplies the gate current to charge the high-side N-channel MOSFET device gate during each cycle’s turnon and also supplies recovery charge for the bootstrap diode. These current peaks can be several amperes. The recommended value of the bootstrap capacitor is 0.1 μF. CBST must be a good-quality, low-ESR, ceramic capacitor located at the pins of the device to minimize potentially damaging voltage transients caused by trace inductance. The minimum value for the bootstrap capacitor is calculated as follows:
where
- QG is the high-side N-channel MOSFET gate charge
- ΔVBST is the tolerable voltage droop on CBST, which is typically less than 5% of VCC or 0.15 V, conservatively
In this example, the value of the BST capacitor (CBST) is 0.1 µF.
The voltage rating of DBST must be greater than the peak SW node voltage plus 16 V. A low leakage diode is mandatory for the bypass operation. The leakage current of DBST must be low enough for the BST charge pump to maintain a sufficient high-side driver supply voltage at high temperature. A low leakage diode also prevents the possibility of excessive VCC voltage during shutdown, in high output voltage applications. If the leakage is excessive, a zener VCC clamp or bleed resistor may be required. High-side driver supply voltage must be greater than the high-side N-channel MOSFET switch’s gate plateau at the minimum input voltage.