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ZHCSEG4 December 2015 ISO7421-EP

PRODUCTION DATA.

封裝選項

機械數據 (封裝 | 引腳)

D|8
- MSOI002K

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

zhcseg4_oa

6 Specifications

6.1 Absolute Maximum Ratings

see ⁽¹⁾

		MIN	MAX	UNIT
V_CC	Supply voltage⁽²⁾, V_CC1, V_CC2	–0.5	6	V
V_I	Voltage at IN, OUT	–0.5	V_CC + 0.5⁽³⁾	V
I_O	Output current	–15	15	mA
T_J(max)	Maximum junction temperature		150	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.

(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
		Field-induced charged-device model, JEDEC Standard 22, Test Method C101	±1500
		Machine model, ANSI/ESDS5.2-1996	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

		MIN	NOM	MAX	UNIT
V_CC1, V_CC2	Supply voltage - 3.3-V operation	3	3.3	3.6	V
V_CC1, V_CC2	Supply voltage - 5-V operation	4.5	5	5.5	V
I_OH	High-level output current	–4			mA
I_OL	Low-level output current			4	mA
V_IH	High-level input voltage	2		5.25	V
V_IL	Low-level input voltage	0		0.8	V
1/t_ui	Signaling rate	0		1	Mbps
t_ui	Input pulse duration	1			us
T_J⁽¹⁾	Junction temperature	–55		136	°C

(1) To maintain the recommended operating conditions for T_J, see the Thermal Information.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾			ISO7421-EP	UNIT
			D (SOIC)
			8 PINS
R_θJA	Junction-to-ambient thermal resistance	Low-K Board	212	°C/W
R_θJA	Junction-to-ambient thermal resistance	High-K Board	116.6	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance		71.6	°C/W
R_θJB	Junction-to-board thermal resistance		57.3	°C/W
ψ_JT	Junction-to-top characterization parameter		28.3	°C/W
ψ_JB	Junction-to-board characterization parameter		56.8	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: V_CC1 and V_CC2 at 5 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OH	High-level output voltage	I_OH = –4 mA; see Figure 6.		V_CCO⁽¹⁾ – 0.8	4.6		V
V_OH	High-level output voltage	I_OH= –20 μA; see Figure 6.		V_CCO – 0.1	5		V
V_OL	Low-level output voltage	I_OL = 4 mA; see Figure 6.			0.2	0.4	V
V_OL	Low-level output voltage	I_OL = 20 μA; see Figure 6.			0	0.1	V
V_I(HYS)	Input threshold voltage hysteresis				400		mV
I_IH	High-level input current	INx at 0 V or V_CCI ⁽¹⁾				10	μA
I_IL	Low-level input current	INx at 0 V or V_CCI ⁽¹⁾		–10			μA
CMTI	Common-mode transient immunity	V_I = V_CCI or 0 V; see Figure 8.		25	50		kV/μs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
I_CC1	Supply current for V_CC1	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		2	4	mA
I_CC2	Supply current for V_CC2	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		2	4	mA

(1) V_CCI = Input-side power supply, V_CCO = Output-side power supply

6.6 Electrical Characteristics: V_CC1 at 5 V ±10%, V_CC2 at 3.3 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OH	High-level output voltage	I_OH = –4 mA; see Figure 6.	5-V side	V_CCO⁽¹⁾ – 0.8	4.6		V
		I_OH = –4 mA; see Figure 6.	3.3-V side	V_CCO – 0.4	3
		I_OH= –20 μA; see Figure 6,		V_CCO – 0.1	V_CC
V_OL	Low-level output voltage	I_OL = 4 mA; see Figure 6.			0.2	0.4	V
V_OL	Low-level output voltage	I_OL = 20 μA; see Figure 6.			0	0.1	V
V_I(HYS)	Input threshold voltage hysteresis				400		mV
I_IH	High-level input current	INx at 0 V or V_CCI ⁽¹⁾				10	μA
I_IL	Low-level input current	INx at 0 V or V_CCI ⁽¹⁾		–10			μA
CMTI	Common-mode transient immunity	V_I = V_CCI or 0 V; seeFigure 8 .		25	40		kV/μs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
I_CC1	Supply current for V_CC1	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		2	4	mA
I_CC2	Supply current for V_CC2	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		1.5	3.5	mA

(1) V_CCI = Input-side power supply, V_CCO = Output-side power supply

6.7 Electrical Characteristics: V_CC1 at 3.3 V ±10%, V_CC2 at 5 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OH	High-level output voltage	I_OH = –4 mA; see Figure 6.	5-V side	V_CCO⁽¹⁾ – 0.8	4.6		V
		I_OH = –4 mA; see Figure 6.	3.3-V side	V_CCO – 0.4	3
		I_OH= –20 μA; see Figure 6		V_CCO – 0.1	V_CC
V_OL	Low-level output voltage	I_OL = 4 mA; see Figure 6.			0.2	0.4	V
V_OL	Low-level output voltage	I_OL = 20 μA; see Figure 6.			0	0.1	V
V_I(HYS)	Input threshold voltage hysteresis				400		mV
I_IH	High-level input current	INx at 0 V or V_CCI⁽¹⁾				10	μA
I_IL	Low-level input current	INx at 0 V or V_CCI⁽¹⁾		–10			μA
CMTI	Common-mode transient immunity	V_I = V_CCI or 0 V; see Figure 8.		25	40		kV/μs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
I_CC1	Supply current for V_CC1	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		1.5	3.5	mA
I_CC2	Supply current for V_CC2	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		2	4	mA

(1) V_CCI = Input-side power supply, V_CCO = Output-side power supply

6.8 Electrical Characteristics: V_CC1 and V_CC2 at 3.3 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OH	High-level output voltage	I_OH = –4 mA; see Figure 6.		V_CCO⁽¹⁾ – 0.4	3		V
V_OH	High-level output voltage	I_OH= –20 μA; see Figure 6.		V_CCO – 0.1	3.3		V
V_OL	Low-level output voltage	I_OL = 4 mA; see Figure 6.			0.2	0.4	V
V_OL	Low-level output voltage	I_OL = 20 μA; see Figure 6.			0	0.1	V
V_I(HYS)	Input threshold voltage hysteresis				400		mV
I_IH	High-level input current	INx at 0 V or V_CCI⁽¹⁾				10	μA
I_IL	Low-level input current	INx at 0 V or V_CCI⁽¹⁾		–10			μA
CMTI	Common-mode transient immunity	V_I = V_CCI or 0 V; seeFigure 8 .		25	40		kV/μs
SUPPLY CURRENT (ALL INPUTS SWITCHING WITH SQUARE WAVE CLOCK SIGNAL FOR DYNAMIC ICC MEASUREMENT)
I_CC1	Supply current for V_CC1	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		1.5	3.5	mA
I_CC2	Supply current for V_CC2	DC to 1 Mbps	V_I = V_CCI or 0 V, 15 pF load		1.5	3.5	mA

(1) V_CCI = Input-side power supply, V_CCO = Output-side power supply

6.9 Power Dissipation

THERMAL METRIC			ISO7421-EP	UNIT
			D (SOIC)
			8 PINS
P_D	Device power dissipation	V_CC1 = V_CC2 = 5.25 V, T_J = 150°C, C_L = 15 pF Input a 1-Mbps 50% duty-cycle square wave	55	mW

6.10 Switching Characteristics: V_CC1 and V_CC2 at 5 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time	See Figure 6.	9	14	ns
PWD⁽¹⁾	Pulse width distortion \|t_PHL – t_PLH\|		0.3	4	ns
t_sk(pp)	Part-to-part skew time			4.9	ns
t_sk(o)	Channel-to-channel output skew time			3.6	ns
t_r	Output signal rise time	See Figure 6.	1		ns
t_f	Output signal fall time		1		ns
t_fs	Fail-safe output delay time from input power loss	See Figure 7.	6		μs

(1) Also known as pulse skew.

6.11 Switching Characteristics: V_CC1 at 5 V ±10%, V_CC2 at 3.3 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time	See Figure 6.	10	18.5	ns
PWD⁽¹⁾	Pulse width distortion \|t_PHL – t_PLH\|		0.5	6	ns
t_sk(pp)	Part-to-part skew time			6.3	ns
t_sk(o)	Channel-to-channel output skew time			7	ns
t_r	Output signal rise time	See Figure 6.	2		ns
t_f	Output signal fall time		2		ns
t_fs	Fail-safe output delay time from input power loss	See Figure 7.	6		μs

(1) Also known as pulse skew.

6.12 Switching Characteristics: V_CC1 at 3.3 V ±10%, V_CC2 at 5 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time	See Figure 6.	10	21	ns
PWD⁽¹⁾	Pulse width distortion \|t_PHL – t_PLH\|		0.5	4.5	ns
t_sk(pp)	Part-to-part skew time			8.5	ns
t_sk(o)	Channel-to-channel output skew time			10.8	ns
t_r	Output signal rise time	See Figure 6.	2		ns
t_f	Output signal fall time		2		ns
t_fs	Fail-safe output delay time from input power loss	See Figure 7.	6		μs

(1) Also known as pulse skew.

6.13 Switching Characteristics: V_CC1 and V_CC2 at 3.3 V ±10%

T_J = –55°C to 136°C

PARAMETER		TEST CONDITIONS	TYP	MAX	UNIT
t_PLH, t_PHL	Propagation delay time	See Figure 6.	12	22.5	ns
PWD⁽¹⁾	Pulse width distortion \|t_PHL – t_PLH\|		1	5.2	ns
t_sk(pp)	Part-to-part skew time			6.8	ns
t_sk(o)	Channel-to-channel output skew time			7.8	ns
t_r	Output signal rise time	See Figure 6.	2		ns
t_f	Output signal fall time	See Figure 6.	2		ns
t_fs	Fail-safe output delay time from input power loss	See Figure 7.	6		μs

(1) Also known as pulse skew.

6.14 Typical Characteristics

Figure 1. Propagation Delay Time vs Free-Air Temperature

Figure 3. Fail-Safe Voltage Threshold vs Free-Air Temperature

Figure 5. Low-Level Output Current vs Low-Level Output Voltage

Figure 2. Input Voltage Switching Threshold vs Free-Air Temperature

Figure 4. High-Level Output Current vs High-Level Output Voltage

封裝選項

機械數據 (封裝 | 引腳)

散熱焊盤機械數據 (封裝 | 引腳)

訂購信息

6 Specifications

6.1 Absolute Maximum Ratings

6.2 ESD Ratings

6.3 Recommended Operating Conditions

6.4 Thermal Information

6.5 Electrical Characteristics: VCC1 and VCC2 at 5 V ±10%

6.6 Electrical Characteristics: VCC1 at 5 V ±10%, VCC2 at 3.3 V ±10%

6.7 Electrical Characteristics: VCC1 at 3.3 V ±10%, VCC2 at 5 V ±10%

6.8 Electrical Characteristics: VCC1 and VCC2 at 3.3 V ±10%

6.9 Power Dissipation

6.10 Switching Characteristics: VCC1 and VCC2 at 5 V ±10%

6.11 Switching Characteristics: VCC1 at 5 V ±10%, VCC2 at 3.3 V ±10%

6.12 Switching Characteristics: VCC1 at 3.3 V ±10%, VCC2 at 5 V ±10%

6.13 Switching Characteristics: VCC1 and VCC2 at 3.3 V ±10%

6.14 Typical Characteristics

6.5 Electrical Characteristics: V_CC1 and V_CC2 at 5 V ±10%

6.6 Electrical Characteristics: V_CC1 at 5 V ±10%, V_CC2 at 3.3 V ±10%

6.7 Electrical Characteristics: V_CC1 at 3.3 V ±10%, V_CC2 at 5 V ±10%

6.8 Electrical Characteristics: V_CC1 and V_CC2 at 3.3 V ±10%

6.10 Switching Characteristics: V_CC1 and V_CC2 at 5 V ±10%

6.11 Switching Characteristics: V_CC1 at 5 V ±10%, V_CC2 at 3.3 V ±10%

6.12 Switching Characteristics: V_CC1 at 3.3 V ±10%, V_CC2 at 5 V ±10%

6.13 Switching Characteristics: V_CC1 and V_CC2 at 3.3 V ±10%