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ZHCSHT4B October 2018 – June 2022 AMC1302-Q1

PRODUCTION DATA

封裝選項

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DWV|8
- MPDS382B

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

6.9 Electrical Characteristics

minimum and maximum specifications apply from T_A = – 40°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V_,INP = – 50 mV to + 50 mV, and INN = GND1; typical specifications are at T_A = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
ANALOG INPUT
V_CMov	Common-mode overvoltage detection level	(V_INP+ V_INN) / 2 to GND1	VDD1 – 2			V
	Hysteresis of common-mode overvoltage detection level			60		mV
V_OS	Input offset voltage⁽¹⁾⁽²⁾	T_A = 25°C, V_INP = V_INN = GND1	–50	±2.5	50	μV
TCV_OS	Input offset drift⁽¹⁾⁽²⁾⁽³⁾		–0.8	±0.15	0.8	μV/°C
CMRR	Common-mode rejection ratio	f_IN = 0 Hz, V_{CM min} ≤ V_CM ≤ V_{VCM max}		–100		dB
CMRR	Common-mode rejection ratio	f_IN = 10 kHz, V_{CM min} ≤ V_CM ≤ V_{CM max}		–98		dB
C_IN	Single-ended input capacitance	INN = GND1, f_IN = 300 kHz		4		pF
C_IND	Differential input capacitance	f_IN = 300 kHz		2		pF
R_IN	Single-ended input resistance	INN = GND1		4.75		kΩ
R_IND	Differential input resistance			4.9		kΩ
I_IB	Input bias current	INP = INN = GND1; I_IB = (I_IBP + I_IBN) / 2	–48.5	–36	–28.5	uA
TCI_IB	Input bias current drift			±1.5		nA/°C
I_IO	Input offset current	I_IO = I_IBP – I_IBN		±10		nA
ANALOG OUTPUT
	Nominal gain			41
E_G	Gain error⁽¹⁾	T_A = 25°C	–0.2%	±0.04%	0.2%
TCE_G	Gain error drift⁽¹⁾⁽⁴⁾		–35	±3	35	ppm/°C
	Nonlinearity⁽¹⁾		–0.03%	±0.01%	0.03%
	Nonlinearity drift			1		ppm/°C
THD	Total harmonic distortion	f_IN = 10 kHz		–85		dB
	Output noise	INP = INN = GND1, f_IN = 0 Hz, BW = 100 kHz brickwall filter		260		μV_RMS
SNR	Signal-to-noise ratio	f_IN = 1 kHz, BW = 10 kHz	80	84		dB
SNR	Signal-to-noise ratio	f_IN = 10 kHz, BW = 100 kHz		70		dB
PSRR	Power-supply rejection ratio⁽²⁾	PSRR vs VDD1, at DC		–113		dB
		PSRR vs VDD1, 100-mV and 10-kHz ripple		–108
		PSRR vs VDD2, at DC		–116
		PSRR vs VDD2, 100-mV and 10-kHz ripple		–87
V_CMout	Common-mode output voltage		1.39	1.44	1.49	V
V_CLIPout	Clipping differential output voltage	V_OUT = (V_OUTP – V_OUTN); \|V_IN\| = \|V_INP – V_INN\| > \|V_Clipping\|	–2.52	±2.49	2.52	V
V_Failsafe	Failsafe differential output voltage	V_CM ≥ V_CMov, or VDD1 missing	–2.63	–2.57	–2.53	V
BW	Output bandwidth		220	280		kHz
R_OUT	Output resistance	On OUTP or OUTN		< 0.2		Ω
	Output short-circuit current	On OUTP or OUTN, sourcing or sinking, INN = INP = GND1, outputs shorted to either GND2 or VDD2		±14		mA
CMTI	Common-mode transient immunity	\|GND1 – GND2\| = 1 kV	100	150		kV/μs
POWER SUPPLY
VDD1_POR	VDD1 power-on-reset threshold voltage	VDD1 falling	2.4	2.6	2.8	V
IDD1	High-side supply current	3.0 V ≤ VDD1 ≤ 3.6 V		6.2	8.5	mA
IDD1	High-side supply current	4.5 V ≤ VDD1 ≤ 5.5 V		7.2	9.8
IDD2	Low-side supply current	3.0 V ≤ VDD2 ≤ 3.6 V		5.3	7.2
IDD2	Low-side supply current	4.5 V ≤ VDD2 ≤ 5.5 V		5.9	8.1

(1) The typical value includes one standard deviation ("sigma") at nominal operating conditions.

(2) This parameter is input referred.

(3) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCV_OS = (V_OS,MAX - V_OS,MIN) / TempRange where V_OS,MAX and V_OS,MIN refer to the maximum and minimum V_OS values measured within the temperature range (–40 to 125℃).

(4) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCE_G (ppm) = ((E_G,MAX - E_G,MIN) / TempRange) x 10⁴ where E_G,MAX and E_G,MIN refer to the maximum and minimum E_G values (in %) measured within the temperature range (–40 to 125℃).